Data sheet 2N5005
2N5005 Applications.
• High-speed power-switching
• Power Transistor
• NPN silicon transistor
Features of 2n5005
• Hermetically sealed TO-59 metal can
• Reference document: MIL-PRF-19500/534
• Also available in chip configuration
2N5005 Benefits
• Qualification Levels: JAN, JANTX, and JANTXV
• Radiation testing available for 2N5005
Absolute Maximum Ratings Tc = 25°C unless otherwise
specified for 2N5005
Parameter Symbol Rating Unit 2N5005
Collector-Emitter Voltage VCEO 80 Volts
Collector-Base Voltage VCBO 100 Volts
Emitter-Base Voltage VEBO 5.5 Volts
Collector Current, Continuous Ic 5 A
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 2 11.4 W mW/°C
Power Dissipation, Tc = 25°C
Derate linearly above 25°C PT 58 331 WmW/°C
Thermal Resistance RejARBJC 88 3 °c/w
Operating Junction Temperature Tj -65 to +200 °c
Storage Temperature TSTG -65 to +200 °c
2N5005 Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Emitter-Base Cutoff Current IEBOIItBO2 VEB = 4 Volts VEB = 5.5 Volts
1 1 mA
Thermal Impedance QIC 10 °C/W
Collector-Emitter Breakdown Voltage V(BR)CEO Ic= 100mA 80 Volts
Collector-Emitter Cutoff Current ICEO VCE = 40 Volts 50 uA
Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts,
TA= 150°C 500 MA
Collector-Emitter Cutoff Current ICKSIICES2 VCE = 60 Volts VCE= 100
Volts 1 1 uA mA
Switching Characteristics 2N5005
Saturated Turn-On Time ION 0.5
Rise Time tr Ic = 5 A, Ifli=IB2 = 500 mA, 1.4
Fall Time tf VBE = 3.7 Volts, RL = 6 Q 0.5 ^s
Saturated Turn-Off Time toFF 1.5
On Characteristics 2N5055
Pulse Test: Pulse Width = 300 us, Duty Cycle £ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
hr-Ei Ic = 50 mA, VCE = 5 Volts 50
hFE2 Ic = 2.5 A, VCE = 5 Volts 70 200
DC Current Gain htE3 Ic = 5 A, VCE = 5 Volts 40
hFE4 Ic = 2.5 A, VCE = 5 Volts 25
TA = -55°C
Base-Emitter Voltage VBE VCE = 5 Volts, Ic = 2.5 A 1.45 Volts
Base-Emitter Saturation Voltage VflEsatl VBEsat2 Ic = 2.5 A, IB =
250 mA Ic = 5 A, IB = 500 mA 1.45 2.20 Volts
Collector-Emitter Saturation Voltage VcEsatl VcEsat2 Ic = 2.5 A, IB
= 250 mA Ic = 5 A, IB = 500 mA 0.75 1.50 Volts
Small Signal Characteristics 2N5055
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude — Common Emitter, Short VCE = 5 Volts, Ic = 500 mA,
Circuit Forward Current Transfer Ratio |hFE f=10MHz 7
Small Signal Short Circuit Forward hFE VCE = 5 Volts, Ic = 100mA, 50
Current Transfer Ratio f = 1 kHz
Open Circuit Output Capacitance COBO VCB= 1 0 Volts, IE = OmA,
100kHZ<f< 1 MHz 250 PF
For Data Sheet click here: 2N5005
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