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Data sheet 2N5005

2N5005 is a Silicon NPN transistor TO-59  Metal can

2N5005 Applications.

High-speed power-switching
Power Transistor
NPN silicon transistor

Features of 2n5005
Hermetically sealed TO-59 metal can
Reference document: MIL-PRF-19500/534
Also available in chip configuration

2N5005 Benefits
Qualification Levels: JAN, JANTX, and JANTXV
Radiation testing available for 2N5005

Absolute Maximum Ratings Tc = 25C unless otherwise specified for 2N5005
Parameter Symbol Rating Unit 2N5005
Collector-Emitter Voltage VCEO 80 Volts
Collector-Base Voltage VCBO 100 Volts
Emitter-Base Voltage VEBO 5.5 Volts
Collector Current, Continuous Ic 5 A
Power Dissipation, TA = 25C 
Derate linearly above 25C PT 2 11.4 W mW/C
Power Dissipation, Tc = 25C 
Derate linearly above 25C PT 58 331 WmW/C
Thermal Resistance RejARBJC 88 3 c/w
Operating Junction Temperature Tj -65 to +200 c
Storage Temperature TSTG -65 to +200 c

2N5005 Off Characteristics

Parameter Symbol Test Conditions Min Typ Max Units
Emitter-Base Cutoff Current IEBOIItBO2 VEB = 4 Volts VEB = 5.5 Volts 1 1 mA
Thermal Impedance QIC 10 C/W
Collector-Emitter Breakdown Voltage V(BR)CEO Ic= 100mA 80 Volts
Collector-Emitter Cutoff Current ICEO VCE = 40 Volts 50 uA
Collector-Emitter Cutoff Current ICEX VCE = 60 Volts, VEB = 2 Volts, TA= 150C 500 MA
Collector-Emitter Cutoff Current ICKSIICES2 VCE = 60 Volts VCE= 100 Volts 1 1 uA mA


Switching Characteristics 2N5005

Saturated Turn-On Time ION 0.5 
Rise Time tr Ic = 5 A, Ifli=IB2 = 500 mA, 1.4 
Fall Time tf VBE = 3.7 Volts, RL = 6 Q 0.5 ^s
Saturated Turn-Off Time toFF 1.5 



On Characteristics 2N5055
Pulse Test: Pulse Width = 300 us, Duty Cycle 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
hr-Ei Ic = 50 mA, VCE = 5 Volts 50 
hFE2 Ic = 2.5 A, VCE = 5 Volts 70 200 
DC Current Gain htE3 Ic = 5 A, VCE = 5 Volts 40 
hFE4 Ic = 2.5 A, VCE = 5 Volts 25 
TA = -55C 
Base-Emitter Voltage VBE VCE = 5 Volts, Ic = 2.5 A 1.45 Volts
Base-Emitter Saturation Voltage VflEsatl VBEsat2 Ic = 2.5 A, IB = 250 mA Ic = 5 A, IB = 500 mA 1.45 2.20 Volts
Collector-Emitter Saturation Voltage VcEsatl VcEsat2 Ic = 2.5 A, IB = 250 mA Ic = 5 A, IB = 500 mA 0.75 1.50 Volts


Small Signal Characteristics 2N5055

Parameter Symbol Test Conditions Min Typ Max Units
Magnitude Common Emitter, Short VCE = 5 Volts, Ic = 500 mA, 
Circuit Forward Current Transfer Ratio |hFE f=10MHz 7 
Small Signal Short Circuit Forward hFE VCE = 5 Volts, Ic = 100mA, 50 
Current Transfer Ratio f = 1 kHz 
Open Circuit Output Capacitance COBO VCB= 1 0 Volts, IE = OmA, 100kHZ<f< 1 MHz 250 PF

For Data Sheet click here: 2N5005

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